Central Semiconductor – 2N3019 – Bipolar Transistors – BJT NPN Gen Pur SS

Central Semiconductor – 2N3019 – Bipolar Transistors – BJT NPN Gen Pur SSOverview:The CENTRAL SEMICONDUCTOR 2N3019 is NPN silicon transistors designed for generalpurpose amplifier applications.Technical Specifications:Type:Bipolar Transistors – BJTRoHS:RoHSMounting Style:Through HolePackage / Case:TO-39    Transistor Polarity:NPNConfiguration:SingleCollector- Emitter Voltage VCEO Max:80 VCollector- Base Voltage VCBO:140 VEmitter- Base Voltage VEBO:7 VCollector-Emitter Saturation Voltage:500 mVMaximum DC Collector Current:1 AGain Bandwidth Product fT:100 MHzMaximum Operating Temperature: 200 CContinuous Collector Current:1 ADC Collector/Base Gain hfe Min:40 at 150 mA, 10 V    Product Manuals / Spec Sheets / Downloads:To download datasheet, Please click Here.