Bipolar Transistors – BJT NPN Si Transistor Epitaxial KSC3503DSTU

Bipolar Transistors – BJT NPN Si Transistor Epitaxial KSC3503DSTU Overview:The KSC3503DSTU is a NPN Epitaxial Silicon Transistor offers 300V low base voltage and 100A collector current. It is suitable for voltage amplifier, current source, CRT display and video output applications. High voltage1.8pF at 30V VCB Low reverse transfer capacitanceExcellent gain linearity for low THD150MHz High frequencyComplementary to KSC1381 Technical Specifications:Product CategoryBipolar Transistors – BJTMounting StyleThrough HolePackage/CaseTO-126-3Transistor PolarityNPNConfigurationSingleCollector- Emitter Voltage VCEO Max300 VCollector- Base Voltage VCBO300 VEmitter- Base Voltage VEBO5 VCollector-Emitter Saturation Voltage600 mVMaximum DC Collector Current100 mAPd – Power Dissipation7 WGain Bandwidth Product fT150 MHzMinimum Operating Temperature– 55 CMaximum Operating TemperatureKSC3503Series10Brandonsemi / FairchildHeight11 mmLength8 mm KSC3503DSTU Data Sheet